Ultra thin Aluminum Nitride AlN substrates and wafers

Thin Aluminum Nitride

Aluminum Nitride substrates thinned to 125 microns (0.005") can be the safe alternative to BeO for high power chips resistors and critical network applications. Lapped or polished substrate surfaces with consistent finish are now available from stock.

Ultra-Thin Aluminum Nitride Lapped Substrates


  • Thickness:
  • Surface:
  • Thermal Conductivity:
  • Length & Width:
  • ± 0.001"
  • 25 u" Ra
  • 175 W/mk
  • ± 0.005" diamond cut

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